PART |
Description |
Maker |
HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. DDR2 SDRAM - SO DIMM 256MB DDR2 SDRAM - SO DIMM 512MB DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
IBM0364404CT3C-75A IBM03644B4CT3C-75A IBM0364404CT |
x8 SDRAM x16 SDRAM x4 SDRAM Module x4内存模块
|
Ecliptek, Corp.
|
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块) 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块(3.3 256M位内存模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块(3.3V28兆位内存模块
|
SIEMENS AG
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM x8 SDRAM x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
W986408CH-8H W986408CH-75 W986408CH |
2M x 8BIT x 4 BANKS SDRAM x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Winbond Electronics, Corp. Winbond Electronics Corp
|
EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM 256MB Unbuffered DDR SDRAM DIMM 1GB Unbuffered DDR SDRAM DIMM 512MB Registered DDR SDRAM DIMM 256MB DDR SDRAM SO DIMM 512MB Unbuffered DDR SDRAM DIMM 1GB DDR SDRAM SO DIMM 1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http:// ELPIDA MEMORY INC
|